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參數(shù)資料
| 型號(hào)： | K4S56323LF-FE |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大小： | 140K |
| 代理商： | K4S56323LF-FE |
K4S56323LF - F(H)E/N/S/C/L/R
May 2004
12
Mobile-SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
2. BURST LENGTH = 8
Initial Address
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S56323LF-L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-N | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S56323LF-L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-N | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-R1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-S | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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