- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373068 > K4S56323LF-S (SAMSUNG SEMICONDUCTOR CO. LTD.) 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S56323LF-S |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大小： | 140K |
| 代理商： | K4S56323LF-S |
K4S56323LF - F(H)E/N/S/C/L/R
May 2004
10
Mobile-SDRAM
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
Mode Select
0
1
0
4
4
1
1
Reserved
0
1
1
3
BA1 BA0
Mode
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
0
0
Setting
for Nor-
mal MRS
1
0
0
Reserved
Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page
*3
Reserved
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A11 ~ A10/AP
A9
*2
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
"0" Setting for
Normal MRS
RFU
*1
W.B.L
Test Mode
CAS Latency
BT
Burst Length
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Extended MRS
Address
BA1
BA0
A11 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
Mode Select
RFU
*1
RFU
*1
PASR
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
Mode Select
PASR
BA1
BA0
Mode
A2
A1
A0
Size of Refreshed Array
0
0
Normal MRS
0
0
0
Full Array
0
1
Reserved
0
0
1
1/2 of Full Array
1
0
EMRS for Mobile SDRAM
0
1
0
1/4 of Full Array
1
1
Reserved
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A11~A10/AP
A9
A8
A7
A6
A5
A4
A3
1
0
1
Reserved
0
0
0
0
0
0
0
0
1
1
0
Reserved
1
1
1
Reserved
EMRS for PASR(Partial Array Self Ref.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S640832D | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632C | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| K4S641632D | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| K4S641633H-C | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1H | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S56323PF | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F75 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F90 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-FG | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。