- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358024 > K4S64323LH-FG1H (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S64323LH-FG1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 為512k × 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | K4S64323LH-FG1H |
K4S64323LF-S(D)N/U/P
Rev. 1.5 Dec 2002
CMOS SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25
°
C to 85
°
C for Extended, -40
°
C to 85
°
C for Industrial)
Notes
:
1. V
IH
(max) = 3.0V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
2.3
2.5
2.7
V
V
DDQ
1.65
-
2.7
V
Input logic high voltage
V
IH
0.8 x V
DDQ
-
V
DDQ
+ 0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.3
V
2
Output logic high voltage
V
OH
V
DDQ
-0.2V
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE
(V
DD
= 2.5V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50
mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
-
4.0
pF
RAS, CAS, WE, CS, CKE, DQM
0
~ DQM
3
C
IN
-
4.0
pF
Address(A
0
~ A
10,
BA
0
~ BA
1
)
C
ADD
-
4.0
pF
DQ
0
~ DQ
31
C
OUT
-
6.0
pF
ABSOLUTE MAXIMUM RATINGS
Notes
:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S64323LH-FG1L | 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S64323LF-SN75-PB | 2Mx32 Mobile SDRAM 90FBGA |
| K4S64323LF-SP75-PB | 2Mx32 Mobile SDRAM 90FBGA |
| K4S64323LF-SN15-PB | 2Mx32 Mobile SDRAM 90FBGA |
| K4S64323LF-SP1L-PB | 2Mx32 Mobile SDRAM 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S64323LH-FG1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S64323LH-FG60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S64323LH-FG75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S64323LH-FL1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S64323LH-FL1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。