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參數(shù)資料
| 型號： | K4S64323LH-HG1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 為512k × 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 64K |
| 代理商： | K4S64323LH-HG1L |
K4S64323LF-S(D)N/U/P
Rev. 1.5 Dec 2002
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25
°
C to 85
°
C for Extended, -40
°
C to 85
°
C for Industrial)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S64323LF-S(D)N/P**
4. K4S64323LF-S(D)U**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ).
Parameter
Symbol
Test Condition
Version
Unit Note
-75
-1H
-1L
-15
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
70
70
65
60
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.5
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
10
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
7
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
mA
Operating Current
I
CC4
I
O
= 0 mA ,Page burst
85
70
70
60
mA
1
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
115
110
100
80
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
-S(D)N/P
350
uA
3
-S(D)U
230
4
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| K4S64323LH-HG60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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| K4S64323LH-HL1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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