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參數(shù)資料
| 型號(hào)： | K6R1008C1A-I20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 128Kx8高速靜電RAM5V工作，旋轉(zhuǎn)頻出。在經(jīng)營(yíng)商業(yè)和工業(yè)溫度范圍。 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | K6R1008C1A-I20 |
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 4 -
February 1998
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range
.
Parameter
Symbol
K6R1008C1A-12
K6R1008C1A-15
K6R1008C1A-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
6
0
7
0
9
ns
Output Disable to High-Z Output
t
OHZ
0
6
0
7
0
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
12
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
D
OUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
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| K6R1008C1B- | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C-J10 | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C-J12 | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C-J15 | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008C1B- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
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