參數(shù)資料
型號: K6R1008V1D-TC08
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: DRAM
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 256Kx4位(與OE)的高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁數(shù): 4/9頁
文件大?。?/td> 188K
代理商: K6R1008V1D-TC08
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 4 -
K6R1004C1D
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70
°
C)
* V
IL
(Min) = -2.0V a.c (Pulse Width
8ns) for I
20mA.
** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
8ns) for I
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5**
V
Input Low Voltage
V
IL
-0.5*
-
0.8
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
TYP
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to Vcc+0.5V
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
d
1
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc=5.0V
±
10%, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
Com.
10ns
-
65
mA
Ind.
10ns
-
75
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
20
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
-
5
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
相關(guān)PDF資料
PDF描述
K6R1008V1D-TC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1D-TC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008V1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008V1D-JI08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1D 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1008V1D-TC08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008V1D-TC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008V1D-TI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008V1D-TI08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008V1D-TI10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.