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參數(shù)資料
| 型號(hào)： | K6R1008V1D-TC10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大小： | 188K |
| 代理商： | K6R1008V1D-TC10 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 9 -
K6R1004C1D
PACKAGE DIMENSIONS
Units:millimeters/Inches
#1
32-SOJ-400
#32
20.95
±
0.12
0.825
±
0.005
1
0
-0.05
-0.002
MAX
21.36
0.841
0.20
0.008
9.40
±
0.25
0.370
±
0.010
MAX
0.148
3.76
MIN
0.69
0.027
( 0.051
( 0.051
( 0.0375
-0.05
-0.002
0.43
0.017
-0.05
-0.002
0.71
0.028
1.27
0.050
#16
#17
0.10 MAX
11.18
±
0.12
0.440
±
0.005
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| K6R1016C1D-TC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-JI08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1D | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1D-TI08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-TI08/10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-TI10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-UC08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-UC08/10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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