參數(shù)資料
型號(hào): K6R1008V1D-UI08
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: DRAM
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 256Kx4位(與OE)的高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 188K
代理商: K6R1008V1D-UI08
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 1 -
K6R1004C1D
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
Rev. 2.0
Rev. 3.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
Initial release with Preliminary.
Current modify
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
1. Final datasheet release.
2. Delete UB,LB releated AC characteristics and timing diagram.
1. Delete 12ns speed bin.
1. Add the Lead Free Package type.
Previous
85mA
75mA
Current
75mA
65mA
I
CC(Industrial)
10ns
12ns
Draft Data
June. 8. 2001
September. 9. 2001
December. 18. 2001
June. 19. 2002
July. 8. 2002
July. 26, 2004
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