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參數(shù)資料
| 型號： | K6R4004C1C-C20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 1Mx4位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 155K |
| 代理商： | K6R4004C1C-C20 |
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
CMOS SRAM
PRELIMINARY
Rev 3.0
- 4 -
March 2000
TEST CONDITIONS*
* The above test conditions are also applied at extended and industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
READ CYCLE*
* The above parameters are also guaranteed at extended and industrial temperature range.
Parameter
Symbol
K6R4004C1C-10
K6R4004C1C-12
K6R4004C1C-15
K6R4004C1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
10
-
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
10
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
10
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
5
-
6
-
7
-
8
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
5
0
6
0
7
0
9
ns
Output Disable to High-Z Output
t
OHZ
0
5
0
6
0
7
0
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
10
-
12
-
15
-
20
ns
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4004C1D-KI10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4004C1C-E | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E10 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E12 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E15 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4004C1C-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
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