- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373075 > K6R4008V1D-JC08 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. PDF資料下載
參數(shù)資料
| 型號： | K6R4008V1D-JC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5.0V操作）。在經(jīng)營商業(yè)和工業(yè)溫度范圍。 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 139K |
| 代理商： | K6R4008V1D-JC08 |
K6R4016C1D
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.0
June 2003
- 6 -
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R4016C1D-10
Unit
Min
Max
Read Cycle Time
t
RC
10
-
ns
Address Access Time
t
AA
-
10
ns
Chip Select to Output
t
CO
-
10
ns
Output Enable to Valid Output
t
OE
-
5
ns
Chip Enable to Low-Z Output
t
LZ
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
5
ns
Output Disable to High-Z Output
t
OHZ
0
5
ns
Output Hold from Address Change
t
OH
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
ns
Chip Selection to Power DownTime
t
PD
-
10
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4016C1D-UP10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4016C1D-UI8 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4008V1D-UI10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4008C1D-UI10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4016C1D-UI10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4008V1D-JC08000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 8ns 36-Pin SOJ Tube |
| K6R4008V1D-JC10 | 制造商:Samsung Electro-Mechanics 功能描述:512K X 8 STANDARD SRAM, 10 ns, PDSO36 |
| K6R4008V1D-JC10T00 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ T/R |
| K6R4008V1D-JI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4008V1D-JI10 | 制造商:Samsung Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。