參數(shù)資料
型號(hào)： K6R4016C1D-JC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 861 SOLID STATE RELAYS RoHS Compliant: Yes
中文描述： 1Mx4位高速靜態(tài)RAM（3.3V的）。在商用和工業(yè)溫度范圍運(yùn)營(yíng)
文件頁(yè)數(shù)： 12/12頁(yè)
文件大?。?/td> 139K
代理商： K6R4016C1D-JC
K6R4016C1D
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.0
June 2003
- 12
C
PACKAGE DIMENSIONS
Units : millimeter.
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
6.90
7.00
7.10
B1
-
3.75
-
C
8.90
9.00
9.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.08
0.50
0.50
B1
#A1
0
A1 INDEX MARK
Notes.
1. Bump counts: 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity: 0.08(Max)
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