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參數(shù)資料
| 型號： | K6R4016C1D-UP10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5.0V操作）。在經(jīng)營商業(yè)和工業(yè)溫度范圍。 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 139K |
| 代理商： | K6R4016C1D-UP10 |
K6R4016C1D
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.0
June 2003
- 7 -
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R4016C1D-10
Unit
Min
Max
Write Cycle Time
t
WC
10
-
ns
Chip Select to End of Write
t
CW
7
-
ns
Address Set-up Time
t
AS
0
-
ns
Address Valid to End of Write
t
AW
7
-
ns
Write Pulse Width(OE High)
t
WP
7
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
ns
Write Recovery Time
t
WR
0
-
ns
Write to Output High-Z
t
WHZ
0
5
ns
Data to Write Time Overlap
t
DW
5
-
ns
Data Hold from Write Time
t
DH
0
-
ns
End of Write to Output Low-Z
t
OW
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Valid Data
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
HZ(3,4,5)
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
BHZ(3,4,5)
t
BLZ(4,5)
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相關(guān)代理商/技術(shù)參數(shù) |
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| K6R4016C1D-UP8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4016V1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4016V1C-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(3.3V Operating) |
| K6R4016V1C-C/C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(3.3V Operating) |
| K6R4016V1C-C10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(3.3V Operating) |
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