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參數(shù)資料
| 型號(hào)： | K6R4016V1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 1Mx4位高速靜態(tài)RAM（5.0V操作）。在經(jīng)營(yíng)商業(yè)和工業(yè)溫度范圍。 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | K6R4016V1 |
K6R4004C1D
CMOS SRAM
PRELIMINARY
Rev 1.0
July 2002
- 1 -
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 1.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
Item
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
I
CC(Commercial)
10ns
12ns
15ns
10ns
12ns
15ns
I
CC(Industrial)
I
SB
I
SB1
Previous
85mA
75mA
Current
75mA
65mA
I
CC(Industrial)
10ns
12ns
Draft Data
September. 7. 2001
November, 3. 2001
November, 3. 2001
December, 18. 2001
July, 09, 2002
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