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參數(shù)資料
| 型號： | K6T4016U3C-RB10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 154K |
| 代理商： | K6T4016U3C-RB10 |
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T4016V3C and K6T4016U3C families are fabricated by
SAMSUNG
′
s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
Process Technology: TFT
Organization: 256K x16
Power Supply Voltage
K6T4016V3C Family: 3.0~3.6V
K6T4016U3C Family: 2.7~3.3V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
LB
Lower Byte (I/O
1~8
)
A
0
~A
17
Address Inputs
UB
Upper Byte (I/O
9~16
)
I/O
1
~I/O
16
Data Input/Output
NC
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6T4016V3C-B
Commercial(0~70
°
C)
3.0~3.6V
55
1)
/70
1)
/85/100
15
μ
A
45mA
44-TSOP2-400F/R
K6T4016U3C-B
2.7~3.3V
70
1)
/85/100
K6T4016V3C-F
Industrial(-40~85
°
C)
3.0~3.6V
20
μ
A
K6T4016U3C-F
2.7~3.3V
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
A5 A6
A7 A8 A9
A11
A10
A0
A1
A2
A3
A4
A13
A14
A15
WE
OE
UB
CS
I/O
1
~I/O
8
A16
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
A17
A12
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
Control
logic
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| K6T4016U3C-RB70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RB85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF10 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4016U3C-RB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-RF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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