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參數(shù)資料
| 型號(hào)： | K6T4016U3C-RF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 154K |
| 代理商： | K6T4016U3C-RF70 |
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
9
Unit: millimeter(inch)
PACKAGE DIMENSIONS
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+ 0.10
- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+ 0.10
- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
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| K6T4016U3C-RF85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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| K6T4016U3C-TB70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4016U3C-RF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TB10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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