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參數(shù)資料
| 型號(hào)： | K6T4016U3C-TB10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | K6T4016U3C-TB10 |
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
7
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS Controlled)
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
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PDF描述 |
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| K6T4016U3C-TB70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TB85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF10 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4016U3C-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016U3C-TF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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