參數(shù)資料
型號(hào)： K6T4016V3C-TF10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
中文描述： 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM
文件頁數(shù)： 6/9頁
文件大?。?/td> 154K
代理商： K6T4016V3C-TF10
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
6
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
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