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參數(shù)資料
| 型號： | K6T8016C3M-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 146K |
| 代理商： | K6T8016C3M-F |
K6T8016C3M Family
Revision 1.01
April 2000
1
CMOS SRAM
Document Title
512Kx16 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
1.0
1.01
Remark
Advance
Final
Final
History
Initial draft
Finalize
- Adopt New Code system.
- Improve V
IN
, V
OUT
max. on ’ABSOLUTE MAXIMUM RATINGS’from
7.0V to V
CC
+0.5V.
Errata correction
Draft Date
June 18, 1999
February 29, 2000
April 17, 2000
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關代理商/技術參數(shù) |
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| K6T8016C3M-RB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-RB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-RF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
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