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參數(shù)資料
| 型號(hào)： | K6T8016C3M-RB70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 146K |
| 代理商： | K6T8016C3M-RB70 |
K6T8016C3M Family
Revision 1.01
April 2000
3
CMOS SRAM
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
K6T8016C3M-TB55
K6T8016C3M-TB70
K6T8016C3M-RB55
K6T8016C3M-RB70
44-TSOP2-F, 55ns, Low Low Power
44-TSOP2-F, 70ns, Low Low Power
44-TSOP2-R, 55ns, Low Low Power
44-TSOP2-R, 70ns, Low Low Power
K6T8016C3M-TF55
K6T8016C3M-TF70
K6T8016C3M-RF55
K6T8016C3M-RF70
44-TSOP2-F, 55ns, Low Low Power
44-TSOP2-F, 70ns, Low Low Power
44-TSOP2-R, 55ns, Low Low Power
44-TSOP2-R, 70ns, Low Low Power
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5V
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6T8016C3M-B
-40 to 85
K6T8016C3M-F
FUNCTIONAL DESCRIPTION
Note: X means don
′
t care. (Must be low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
X
X
X
High-Z
High-Z
Deselected
Standby
L
H
H
X
X
High-Z
High-Z
Output Disabled
Active
L
X
X
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6T8016C3M-RF55 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-RF70 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB70 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TF55 | 512Kx16 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T8016C3M-RF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55000 | 制造商:Samsung SDI 功能描述: |
| K6T8016C3M-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
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