參數(shù)資料
型號(hào)： K6X1008T2D-TQ70
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類(lèi)： DRAM
英文描述： 128Kx8 bit Low Power CMOS Static RAM
中文描述： 128Kx8位低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 153K
代理商： K6X1008T2D-TQ70
CMOS SRAM
K6X1008T2D Family
Revision 1.0
September 2003
2
128Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 128K x 8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three state outputs
Package Type: 32-SOP-525, 32-TSOP1-0820F
32-SOP-525, 32-TSOP1-0820F
GENERAL DESCRIPTION
The K6X1008T2D families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2,
Max)
K6X1008T2D-B
Commercial(0~70
°
C)
2.7~3.6V
55
1)
/70
2)
/85ns
6
μ
A
20mA
32-SOP-525
32-TSOP1-0820F
32-SOP-525
32-TSOP1-0820F
K6X1008T2D-F
Industrial(-40~85
°
C)
K6X1008T2D-Q
Automotive(-40~125
°
C)
70
2)
/85ns
10
μ
A
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
PIN DESCRIPTION
Name
Function
A
0
~A
16
Address Inputs
WE
Write Enable Input
CS
1
,CS
2
Chip Select Input
OE
Output Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
NC
No Connection
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
1
WE
OE
CS
2
Control
logic
A11
A9
A8
A13
A15
VNC
A12
A7
A6
A5
A4
OE
CS1
I/O8
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
32-TSOP
Row
Addresses
Column Addresses
相關(guān)PDF資料
PDF描述
K6X4008C1F-DF70 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):10-8 RoHS Compliant: Yes
K6X4008C1F-F Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes
K6X4008C1F-GB55 Circular Connector; Body Material:Composite; Series:RADSOK; Number of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Connector Type:Circular; Gender:Receptacle; Wire Size (AWG):10-8
K6X4008C1F-GB70 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes
K6X4008C1F-GF55 512Kx8 bit Low Power full CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6X1008T2D-TQ85 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM
K6X4008C1F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB55 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB70 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
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