參數(shù)資料
型號(hào)： K6X1008T2D-TQ85
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DRAM
英文描述： 128Kx8 bit Low Power CMOS Static RAM
中文描述： 128Kx8位低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 153K
代理商： K6X1008T2D-TQ85
CMOS SRAM
K6X1008T2D Family
Revision 1.0
September 2003
3
PRODUCT LIST
1. Operating voltage range is 3.0V~3.6V
2. Lead Free Product
Commercial Products(0~70
°
C)
Industrial Products(-40~85
°
C)
Atomotive Products(-40~125
°
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X1008T2D-GB55
1)
K6X1008T2D-GB70
K6X1008T2D-GB85
K6X1008T2D-TB55
1)
K6X1008T2D-TB70
K6X1008T2D-TB85
K6X1008T2D-BB55
1,2)
K6X1008T2D-BB70
2)
K6X1008T2D-BB85
2)
K6X1008T2D-PB55
1,2)
K6X1008T2D-PB70
2)
K6X1008T2D-PB85
2)
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
K6X1008T2D-GF55
1)
K6X1008T2D-GF70
K6X1008T2D-GF85
K6X1008T2D-TF55
1)
K6X1008T2D-TF70
K6X1008T2D-TF85
K6X1008T2D-BF55
1,2)
K6X1008T2D-BF70
2)
K6X1008T2D-BF85
2)
K6X1008T2D-PF55
1,2)
K6X1008T2D-PF70
2)
K6X1008T2D-PF85
2)
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
K6X1008T2D-GQ70
K6X1008T2D-GQ85
K6X1008T2D-TQ70
K6X1008T2D-TQ85
32-SOP, 70ns, L
32-SOP, 85ns, L
32-TSOP-F, 70ns, L
32-TSOP-F, 85ns, L
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
H
X
1)
H
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.2 to V
CC
+0.3V(Max. 3.9V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 3.9
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6X1008T2D-B
-40 to 85
K6X1008T2D-F
-40 to 125
K6X1008T2D-Q
相關(guān)PDF資料
PDF描述
K6X1008T2D-TB70 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TQ70 128Kx8 bit Low Power CMOS Static RAM
K6X4008C1F-DF70 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):10-8 RoHS Compliant: Yes
K6X4008C1F-F Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes
K6X4008C1F-GB55 Circular Connector; Body Material:Composite; Series:RADSOK; Number of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Connector Type:Circular; Gender:Receptacle; Wire Size (AWG):10-8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6X4008C1F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1FBF55 制造商: 功能描述: 制造商:Samsung Semiconductor 功能描述: 制造商:undefined 功能描述:
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