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參數(shù)資料
| 型號： | K6X1008T2D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 153K |
| 代理商： | K6X1008T2D |
CMOS SRAM
K6X1008T2D Family
Revision 1.0
September 2003
3
PRODUCT LIST
1. Operating voltage range is 3.0V~3.6V
2. Lead Free Product
Commercial Products(0~70
°
C)
Industrial Products(-40~85
°
C)
Atomotive Products(-40~125
°
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X1008T2D-GB55
1)
K6X1008T2D-GB70
K6X1008T2D-GB85
K6X1008T2D-TB55
1)
K6X1008T2D-TB70
K6X1008T2D-TB85
K6X1008T2D-BB55
1,2)
K6X1008T2D-BB70
2)
K6X1008T2D-BB85
2)
K6X1008T2D-PB55
1,2)
K6X1008T2D-PB70
2)
K6X1008T2D-PB85
2)
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
K6X1008T2D-GF55
1)
K6X1008T2D-GF70
K6X1008T2D-GF85
K6X1008T2D-TF55
1)
K6X1008T2D-TF70
K6X1008T2D-TF85
K6X1008T2D-BF55
1,2)
K6X1008T2D-BF70
2)
K6X1008T2D-BF85
2)
K6X1008T2D-PF55
1,2)
K6X1008T2D-PF70
2)
K6X1008T2D-PF85
2)
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 85ns, LL
K6X1008T2D-GQ70
K6X1008T2D-GQ85
K6X1008T2D-TQ70
K6X1008T2D-TQ85
32-SOP, 70ns, L
32-SOP, 85ns, L
32-TSOP-F, 70ns, L
32-TSOP-F, 85ns, L
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
H
X
1)
H
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.2 to V
CC
+0.3V(Max. 3.9V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 3.9
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6X1008T2D-B
-40 to 85
K6X1008T2D-F
-40 to 125
K6X1008T2D-Q
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X1008T2D-B | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB551 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB85 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BF55 | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X1008T2D-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB551 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008T2D-BF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
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