參數(shù)資料
型號(hào)： K6X4008C1F-BB70
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx8 bit Low Power full CMOS Static RAM
中文描述： 512Kx8位充分的CMOS低功耗靜態(tài)存儲(chǔ)器
文件頁數(shù)： 4/9頁
文件大?。?/td> 177K
代理商： K6X4008C1F-BB70
K6X4008C1F Family
CMOS SRAM
Revision 1.0
September 2003
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1.Commercial Product: T
A
=0 to 70
°
C, otherwise specified
Industrial Product: T
A
=-40 to 85
°
C, otherwise specified
Automotive Product: T
A
=-40 to 125
°
C, otherwise specified
2. Overshoot: V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot: -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.5
2)
0.8
V
Input low voltage
V
IL
-0.5
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or
WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
5
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA
CS
≤
0.2V, V
IN
≥
0.2V or V
IN
≥
Vcc-0.2V
-
-
7
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
30
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
0.4
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
K6X4008C1F-B
-
-
20
μ
A
K6X4008C1F-F
-
-
K6X4008C1F-Q
-
-
30
μ
A
相關(guān)PDF資料
PDF描述
K6X4008C1F-BF55 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BF70 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Plug; Cable Diameter Max:0.787"; Cable Diameter Min:0.472"; Gender:Plug; Wire Size (AWG):10-8 RoHS Compliant: Yes
K6X4008C1F-DB55 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Plug; Cable Diameter Max:0.984"; Cable Diameter Min:0.708"; Gender:Plug; Wire Size (AWG):10-8 RoHS Compliant: Yes
K6X4008C1F-DB70 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Plug; Cable Diameter Max:0.787"; Cable Diameter Min:0.472"; Gender:Plug; Wire Size (AWG):6-4 RoHS Compliant: Yes
K6X4008C1F-DF55 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Plug; Cable Diameter Max:0.984"; Cable Diameter Min:0.708"; Gender:Plug; Wire Size (AWG):6-4 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6X4008C1FBF55 制造商: 功能描述: 制造商:Samsung Semiconductor 功能描述: 制造商:undefined 功能描述:
K6X4008C1F-BF55 制造商:SAMSG 功能描述:
K6X4008C1F-BF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DB55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DB70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM
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