- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373077 > K6X4008C1F-F (SAMSUNG SEMICONDUCTOR CO. LTD.) Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | K6X4008C1F-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes |
| 中文描述： | 512Kx8位充分的CMOS低功耗靜態(tài)存儲器 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 177K |
| 代理商： | K6X4008C1F-F |
K6X4008C1F Family
CMOS SRAM
Revision 1.0
September 2003
7
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
Controlled)
Address
CS
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
t
CW(2)
t
WP(1)
t
AW
NOTES
(WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, t
WP
is measured from the begining of write
to the end of write.
2. t
CW
is measured from the CS going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end of write to the address change. t
WR
is applied in case a write ends with CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
t
CW(2)
t
WR(4)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
相關PDF資料 |
PDF描述 |
|---|---|
| K6X4008C1F-GB55 | Circular Connector; Body Material:Composite; Series:RADSOK; Number of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Connector Type:Circular; Gender:Receptacle; Wire Size (AWG):10-8 |
| K6X4008C1F-GB70 | Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes |
| K6X4008C1F-GF55 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-GF70 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-GQ55 | 512Kx8 bit Low Power full CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008C1F-GB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-GB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-GF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-GF55000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin SOP 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin SOP Tray |
| K6X4008C1F-GF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。