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參數(shù)資料
| 型號： | K6X4008C1F-MF55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power full CMOS Static RAM |
| 中文描述： | 512Kx8位充分的CMOS低功耗靜態(tài)存儲器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 177K |
| 代理商： | K6X4008C1F-MF55 |
K6X4008C1F Family
CMOS SRAM
Revision 1.0
September 2003
6
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
Address
OE
Data ou
t
NOTES (
READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ
t
RC
t
OE
t
CO1
相關PDF資料 |
PDF描述 |
|---|---|
| K6X4008C1F-MF70 | PTSE CON 20 SKT (16-20) |
| K6X4008C1F-Q | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VB55 | 97-3102A18-1S |
| K6X4008C1F-VB70 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VF55 | 512Kx8 bit Low Power full CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008C1F-MF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VB55000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin TSOP-II |
| K6X4008C1F-VB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
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