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參數(shù)資料
| 型號： | K6X4008C1F-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power full CMOS Static RAM |
| 中文描述： | 512Kx8位充分的CMOS低功耗靜態(tài)存儲器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 177K |
| 代理商： | K6X4008C1F-Q |
K6X4008C1F Family
CMOS SRAM
Revision 1.0
September 2003
2
512Kx8 bit Low Power full CMOS Static RAM
GENERAL DESCRIPTION
The K6X4008C1F families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families sup-
ports various operating temperature range and various
package types for user flexibility of system design. The fam-
ilies also support low data retention voltage for battery back-
up operation with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
PIN DESCRIPTION
Pin Name
Function
WE
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
A
0
~A
18
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6X4008C1F-B
Commercial (0~70
°
C
)
4.5~5.5V
55
1)
/70ns
20
μ
A
30mA
32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
K6X4008C1F-F
Industrial (-40~85
°
C
)
K6X4008C1F-Q
Automotive (-40~125
°
C
)
30
μ
A
32-SOP-525, 32-TSOP2-400F
FUNCTIONAL BLOCK DIAGRAM
32-DIP
32-SOP
32-TSOP2
(Forward)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Reverse)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
WE
OE
Control
logic
Row
Addresses
Column Addresses
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X4008C1F-VB55 | 97-3102A18-1S |
| K6X4008C1F-VB70 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VF55 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VF70 | 512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VQ55 | 512Kx8 bit Low Power full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008C1F-VB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VB55000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin TSOP-II |
| K6X4008C1F-VB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
| K6X4008C1F-VF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power full CMOS Static RAM |
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