- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373080 > K7A801800 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K7A801800 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 8/18頁(yè) |
| 文件大?。?/td> | 400K |
| 代理商： | K7A801800 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
K7A801809B
256Kx36 & 512Kx18 Synchronous SRAM
- 8 -
Rev 3.0
Nov. 2003
K7A803609B
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note :
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.3
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
°
C
Industrial
T
OPR
-40 to 85
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7A801800B-QC14 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800B-QC16 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801809B-QC25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801809B-QCI25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7B801825B-QC65 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7A801800A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800A-14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800A-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800A-16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。