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參數(shù)資料
| 型號(hào)： | K7A801801M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 Synchronous SRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大小： | 466K |
| 代理商： | K7A801801M |
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K7A801801M
256Kx36 & 512Kx18 Synchronous SRAM
- 1 -
Rev 3.0
May 1999
K7A803601M
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
2.0
3.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS
to V
DD
to Max.
Remove 119BGA Package Type.
Change DC Characteristics.
I
SB
value from 65mA to 110mA at -72
I
SB
value from 60mA to 110mA at -85
I
SB
value from 50mA to 100mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Changed t
CD
from 4.0ns to 4.2ns at -85.
Changed t
OE
from 4.0ns to 4.2ns at -85.
2. Changed DC condition at Icc and parameters
Icc ; from 375mA to 400mA at -72,
from 340mA to 380mA at -85,
from 300mA to 350mA at -10,
I
SB
; from 110mA to 130mA at -72,
from 110mA to 130mA at -85,
from 100mA to 120mA at -10
A
DD
V
DDQ
Supply voltage( 2.5V )
Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
Final spec Release.
1. Remove
V
DDQ
Supply voltage( 2.5V I/O )
1. Add
V
DDQ
Supply voltage( 2.5V I/O )
Draft Date
May. 07 . 1998
June .08. 1998
Aug. 20. 1998
Aug. 27. 1998
Sep. 09. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
May. 13. 1999
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