參數(shù)資料
型號: K7A801809A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx36 & 512Kx18 Synchronous SRAM
中文描述: 256Kx36
文件頁數(shù): 18/20頁
文件大?。?/td> 373K
代理商: K7A801809A
K7A801809A
256Kx36 & 512Kx18 Synchronous SRAM
- 18 -
Rev 1.0
July 2000
K7A803609A
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 512Kx18 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 512K depth to 1M depth without extra logic.
Data
Address
CLK
ADS
Microprocessor
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address Data
ADV
ADSP
512Kx18
SPB
SRAM
(Bank 0)
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address Data
ADV
ADSP
512Kx18
SPB
SRAM
(Bank 1)
CLK
Address
Cache
Controller
A
[0:19]
A
[19]
A
[0:18]
A
[19]
A
[0:18]
I/O
[0:71]
Clock
ADSP
ADDRESS
[0:n]
Data Out
(Bank 0)
Bank 0 is selected by
CS
2
, and Bank 1 deselected by
CS
2
Q1-1
Q1-2
Q1-4
Q1-3
OE
Data Out
(Bank 1)
t
SS
tSH
Don
t Care
A1
A2
WRITE
CS
1
A
n+1
ADV
Q2-2
Q2-4
Q2-3
t
AS
t
AH
t
WS
t
WH
t
ADVS
t
ADVH
t
OE
t
LZOE
tHZC
Bank 0 is deselected by
CS
2
, and Bank 1 selected by
CS
2
t
CSS
tCSH
t
CD
t
LZC
Undefined
Q2-1
INTERLEAVE READ TIMING
(Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
*Notes :
n = 14 32K depth , 15 64K depth
16 128K depth , 17 256K depth
18 512K depth , 19 1M depth
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