- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373080 > K7A803600B-QC14 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K7A803600B-QC14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 7/18頁(yè) |
| 文件大?。?/td> | 400K |
| 代理商： | K7A803600B-QC14 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
K7A801809B
256Kx36 & 512Kx18 Synchronous SRAM
- 7 -
Rev 3.0
Nov. 2003
K7A803609B
SYNCHRONOUS TRUTH TABLE
NOTE
: 1. X means "Don
′
t Care". 2. The rising edge of clock is symbolized by
↑
.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS
1
CS
2
CS
2
ADSP ADSC
ADV
WRITE
CLK
ADDRESS ACCESSED
OPERATION
H
X
X
X
L
X
X
↑
N/A
Not Selected
L
L
X
L
X
X
X
↑
N/A
Not Selected
L
X
H
L
X
X
X
↑
N/A
Not Selected
L
L
X
X
L
X
X
↑
N/A
Not Selected
L
X
H
X
L
X
X
↑
N/A
Not Selected
L
H
L
L
X
X
X
↑
External Address
Begin Burst Read Cycle
L
H
L
H
L
X
L
↑
External Address
Begin Burst Write Cycle
L
H
L
H
L
X
H
↑
External Address
Begin Burst Read Cycle
X
X
X
H
H
L
H
↑
Next Address
Continue Burst Read Cycle
H
X
X
X
H
L
H
↑
Next Address
Continue Burst Read Cycle
X
X
X
H
H
L
L
↑
Next Address
Continue Burst Write Cycle
H
X
X
X
H
L
L
↑
Next Address
Continue Burst Write Cycle
X
X
X
H
H
H
H
↑
Current Address
Suspend Burst Read Cycle
H
X
X
X
H
H
H
↑
Current Address
Suspend Burst Read Cycle
X
X
X
H
H
H
L
↑
Current Address
Suspend Burst Write Cycle
H
X
X
X
H
H
L
↑
Current Address
Suspend Burst Write Cycle
TRUTH TABLES
WRITE TRUTH TABLE
(x36)
Notes :
1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(
↑
).
GW
BW
WEa
WEb
WEc
WEd
OPERATION
H
H
X
X
X
X
READ
H
L
H
H
H
H
READ
H
L
L
H
H
H
WRITE BYTE a
H
L
H
L
H
H
WRITE BYTE b
H
L
H
H
L
L
WRITE BYTE c and d
H
L
L
L
L
L
WRITE ALL BYTEs
L
X
X
X
X
X
WRITE ALL BYTEs
WRITE TRUTH TABLE
(x18)
Notes :
1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(
↑
).
GW
BW
WEa
WEb
OPERATION
H
H
X
X
READ
H
L
H
H
READ
H
L
L
H
WRITE BYTE a
H
L
H
L
WRITE BYTE b
H
L
L
L
WRITE ALL BYTEs
L
X
X
X
WRITE ALL BYTEs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7A803600B-QC16 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A803609B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A803609B-QC25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800B-QC14 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7A803600B-QC16 | 制造商:Samsung Semiconductor 功能描述: |
| K7A803600M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
| K7A803600M-QC14000 | 制造商:Samsung SDI 功能描述: |
| K7A803601M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
| K7A803609A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。