參數(shù)資料
型號: K7A803609A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx36 & 512Kx18 Synchronous SRAM
中文描述: 256Kx36
文件頁數(shù): 11/20頁
文件大?。?/td> 373K
代理商: K7A803609A
K7A801809A
256Kx36 & 512Kx18 Synchronous SRAM
- 11 -
Rev 1.0
July 2000
K7A803609A
AC TIMING CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes :
1. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP is sampled low and
CS is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled.
3. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state.
PARAMETER
Symbol
-22
-20
-18
UNIT
Min
Max
MIN
MAX
Min
Max
Cycle Time
t
CYC
4.4
-
5.0
-
5.4
-
ns
Clock Access Time
t
CD
-
2.8
-
3.1
-
3.3
ns
Output Enable to Data Valid
t
OE
-
2.8
-
3.1
-
3.3
ns
Clock High to Output Low-Z
t
LZC
0
-
0
-
0
-
ns
Output Hold from Clock High
t
OH
1.0
-
1.0
-
1.0
-
ns
Output Enable Low to Output Low-Z
t
LZOE
0
-
0
-
0
-
ns
Output Enable High to Output High-Z
t
HZOE
-
2.8
-
3.0
-
3.0
ns
Clock High to Output High-Z
t
HZC
1.0
2.8
1.0
3.0
1.0
3.0
ns
Clock High Pulse Width
t
CH
1.8
-
2.0
-
2.4
-
ns
Clock Low Pulse Width
t
CL
1.8
-
2.0
-
2.4
-
ns
Address Setup to Clock High
t
AS
1.4
-
1.4
-
1.4
-
ns
Address Status Setup to Clock High
t
SS
1.4
-
1.4
-
1.4
-
ns
Data Setup to Clock High
t
DS
1.4
-
1.4
-
1.4
-
ns
Write Setup to Clock High (GW, BW, WE
X
)
t
WS
1.4
-
1.4
-
1.4
-
ns
Address Advance Setup to Clock High
t
ADVS
1.4
-
1.4
-
1.4
-
ns
Chip Select Setup to Clock High
t
CSS
1.4
-
1.4
-
1.4
-
ns
Address Hold from Clock High
t
AH
0.4
-
0.4
-
0.4
-
ns
Address Status Hold from Clock High
t
SH
0.4
-
0.4
-
0.4
-
ns
Data Hold from Clock High
t
DH
0.4
-
0.4
-
0.4
-
ns
Write Hold from Clock High (GW, BW, WE
X
)
t
WH
0.4
-
0.4
-
0.4
-
ns
Address Advance Hold from Clock High
t
ADVH
0.4
-
0.4
-
0.4
-
ns
Chip Select Hold from Clock High
t
CSH
0.4
-
0.4
-
0.4
-
ns
ZZ High to Power Down
t
PDS
2
-
2
-
2
-
cycle
ZZ Low to Power Up
t
PUS
2
-
2
-
2
-
cycle
Output Load(B),
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
353
/
1538
5pF*
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
319
/
1667
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50
RL=50
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
30pF*
相關(guān)PDF資料
PDF描述
K7A801809B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7B803625 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7B803625B-QC75 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC16 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7A803609B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B_06 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM
K7A803609B-PI25000 制造商:Samsung SDI 功能描述:
K7A803609B-QC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7AABA000001 制造商:Panasonic Industrial Company 功能描述:IC