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參數(shù)資料
| 型號： | K7B203625A-TC800 |
| 元件分類： | SRAM |
| 英文描述： | 64K X 36 CACHE SRAM, 8 ns, PQFP100 |
| 封裝： | 20 X 14 MM, TQFP-100 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 438K |
| 代理商： | K7B203625A-TC800 |
K7B203625A
64Kx36 Synchronous SRAM
- 1 -
Rev 3.0
December 1998
Document Title
64Kx36-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
0.1
1.0
2.0
3.0
History
Initial draft
Change DC Characteristics.
ICC value from 320mA to 250mA at -7.
ICC value from 300mA to 230mA at -8.
ICC value from 280mA to 200mA at -9.
ISB value from 90mA to 70mA at -7.
ISB value from 80mA to 60mA at -8.
ISB value from 70mA to 50mA at -9.
ISB1 value from 30mA to 20mA
ISB2 value from 30mA to 20mA
Final spec release.
Add VDDQ Supply voltage( 2.5V )
Min tOH Parameter Change : from 2.0ns to 3.0ns
Min tLZC Parameter Change : from 0ns to 3ns
Draft Date
July. 03. 1998
Sep. 14. 1998
Nov. 16. 1998
Dec. 02. 1998
Dec. 17. 1998
Remark
Preliminary
Fianl
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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