- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373080 > K7I163682B-FC16 (SAMSUNG SEMICONDUCTOR CO. LTD.) 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM PDF資料下載
參數(shù)資料
| 型號： | K7I163682B-FC16 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| 中文描述： | 512Kx36位，1Mx18位首席信息官b2條DDRII的SRAM |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 378K |
| 代理商： | K7I163682B-FC16 |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
- 11 -
Rev 3.1
July. 2004
K7I163682B
K7I161882B
AC TIMING CHARACTERISTICS
(V
DD
=1.8V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes
: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
2. Control singles are R, W,BW
0
,BW
1
and (NW
0
, NW
1
, for x8) and (BW
2
, BW
3
, also for x36)
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX
1
is bigger than tCHQZ.
The specs as shown do not imply bus contention beacuse tCHQX
1
is a MIN parameter that is worst case at totally different test conditions
(0
°
C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70
°
C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a
±
0.1
ns variation from echo clock to data.
The data sheet parameters reflect tester guardbands and test setup variations.
PARAMETER
SYMBOL
-30
-25
-20
-16
UNIT NOTE
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Clock
Clock Cycle Time (K, K, C, C)
t
KHKH
3.30
5.25
4.00
6.30
5.00
7.88
6.00
8.40
ns
Clock Phase Jitter (K, K, C, C)
t
KC var
0.20
0.20
0.20
0.20
ns
5
Clock High Time (K, K, C, C)
t
KHKL
1.32
1.60
2.00
2.40
ns
Clock Low Time (K, K, C, C)
t
KLKH
1.32
1.60
2.00
2.40
ns
Clock to Clock (K
↑
→
K
↑
, C
↑
→
C
↑
)
t
KHKH
1.49
1.80
2.20
2.70
ns
Clock to data clock (K
↑
→
C
↑
, K
↑→
C
↑
)
t
KHCH
0.00
1.45
0.00
1.80
0.00
2.30
0.00
2.80
ns
DLL Lock Time (K, C)
t
KC lock
1024
1024
1024
1024
cycle
6
K Static to DLL reset
t
KC reset
30
30
30
30
ns
Output Times
C, C High to Output Valid
t
CHQV
0.45
0.45
0.45
0.50
ns
3
C, C High to Output Hold
t
CHQX
-0.45
-0.45
-0.45
-0.50
ns
3
C, C High to Echo Clock Valid
t
CHCQV
0.45
0.45
0.45
0.50
ns
C, C High to Echo Clock Hold
t
CHCQX
-0.45
-0.45
-0.45
-0.50
ns
CQ, CQ High to Output Valid
t
CQHQV
0.27
0.30
0.35
0.40
ns
7
CQ, CQ High to Output Hold
t
CQHQX
-0.27
-0.30
-0.35
-0.40
ns
7
C, High to Output High-Z
t
CHQZ
0.45
0.45
0.45
0.50
ns
3
C, High to Output Low-Z
t
CHQX1
-0.45
-0.45
-0.45
-0.50
ns
3
Setup Times
Address valid to K rising edge
t
AVKH
0.40
0.50
0.60
0.70
ns
Control inputs valid to K rising edge
t
IVKH
0.40
0.50
0.60
0.70
ns
2
Data-in valid to K, K rising edge
t
DVKH
0.30
0.35
0.40
0.50
ns
Hold Times
K rising edge to address hold
t
KHAX
0.40
0.50
0.60
0.70
ns
K rising edge to control inputs hold
t
KHIX
0.40
0.50
0.60
0.70
ns
K, K rising edge to data-in hold
t
KHDX
0.30
0.35
0.40
0.50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7I163682B-FC20 | GT 35C 35#16 PIN PLUG RTANG |
| K7I163682B-FC25 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC30 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I643684M-FCI20 | 72Mb DDRII SRAM Specification |
| K7I641884M | 72Mb DDRII SRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7I163682B-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163684B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b4 SRAM |
| K7I163684B-EC25000 | 制造商:Samsung Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。