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參數(shù)資料
| 型號(hào)： | K7M161835B-QCI65 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 Pipelined NtRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 452K |
| 代理商： | K7M161835B-QCI65 |
512Kx36 & 1Mx18 Pipelined N
t
RAM
TM
- 1 -
Rev 0.4
Jan. 2005
K7N161831B
K7N163631B
Preliminary
Document Title
512Kx36 & 1Mx18-Bit Pipelined N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial document.
1. Update the current spec(Icc, I
SB
)
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
1. Remove the 1.8V Vdd voltage level
1. Remove the -20 and -13 speed bin
Draft Date
Mar. 23, 2004
May. 13, 2004
Sep. 21. 2004
Oct. 18, 2004
Jan. 04, 2005
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