參數(shù)資料
型號： K7M163635B-QCI65
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx36 & 1Mx18 Pipelined NtRAM
中文描述： 512Kx36
文件頁數(shù)： 12/24頁
文件大?。?/td> 452K
代理商： K7M163635B-QCI65
512Kx36 & 1Mx18 Pipelined N
t
RAM
TM
- 12 -
Rev 0.4
Jan. 2005
K7N161831B
K7N163631B
Preliminary
DC ELECTRICAL CHARACTERISTICS
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-25
-
360
mA
1,2
-16
-
300
Standby Current
I
SB
Device deselected, I
OUT
=0mA, ZZ
≤
V
IL
,
f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V,
f=0, All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
170
mA
I
SB1
-
150
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
130
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.5V
V
DDQ
/2
See Fig. 1
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
相關PDF資料
PDF描述
K7N161831B-QC16 512Kx36 & 1Mx18 Pipelined NtRAM
K7N161831B-QFCI25 512Kx36 & 1Mx18 Pipelined NtRAM
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相關代理商/技術參數(shù)
參數(shù)描述
K7M163635B-QI65 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Flow-Through NtRAM
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K7M321825M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 Flow-Through NtRAM
K7M321825MQC65 制造商:Samsung Semiconductor 功能描述:
K7M321825M-QC65000 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 36M-Bit 2M x 18 6.5ns 100-Pin TQFP
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