參數(shù)資料
型號： K7N161831B-QFCI25
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx36 & 1Mx18 Pipelined NtRAM
中文描述： 512Kx36
文件頁數(shù)： 12/24頁
文件大小： 452K
代理商： K7N161831B-QFCI25
512Kx36 & 1Mx18 Pipelined N
t
RAM
TM
- 12 -
Rev 0.4
Jan. 2005
K7N161831B
K7N163631B
Preliminary
DC ELECTRICAL CHARACTERISTICS
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-25
-
360
mA
1,2
-16
-
300
Standby Current
I
SB
Device deselected, I
OUT
=0mA, ZZ
≤
V
IL
,
f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V,
f=0, All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
170
mA
I
SB1
-
150
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
130
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.5V
V
DDQ
/2
See Fig. 1
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
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