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參數(shù)資料
| 型號(hào)： | K7P161866A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| 中文描述： | 512Kx36和1Mx18同步流水線的SRAM |
| 文件頁(yè)數(shù)： | 14/14頁(yè) |
| 文件大?。?/td> | 332K |
| 代理商： | K7P161866A |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)
Rev 0.3
K7P161866A
512Kx36 & 1Mx18 SRAM
K7P163666A
Sep. 2003
- 14
119 BGA PACKAGE DIMENSIONS
0.750
±
0.15
1.27
1.27
12.50
±
0.10
0.60
±
0.10
0.60
±
0.10
1.50REF
C1.00
C0.70
14.00
±
0.10
22.00
±
0.10
20.50
±
0.10
NOTE
:
1. All Dimensions are in Millimeters.
2. Solder Ball to PCB Offset : 0.10 MAX.
3. PCB to Cavity Offset : 0.10 MAX.
Indicator of
Ball(1A) Location
119 BGA PACKAGE THERMAL CHARACTERISTICS
NOTE
: 1. Junction temperature can be calculated by : T
J
= T
A
+ P
D
x Theta_JA.
Parameter
Symbol
Thermal Resistance
Unit
Note
Junction to Ambient(at still air)
Theta_JA
TBD
°
C/W
1W Heating
Junction to Case
Theta_JC
TBD
°
C/W
Junction to Board
Theta_JB
TBD
°
C/W
2W Heating
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7P161866A-HC25 | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC30 | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC33 | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P163666A | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P163666A-HC25 | 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7P161866A-HC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P163666A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P163666A-HC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
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