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參數(shù)資料
| 型號(hào)： | K8D1716UTC-DC09 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 31/41頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K8D1716UTC-DC09 |
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FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
31
Alternate WE Controlled Program Operations
SWITCHING WAVEFORMS
Notes :
1. DQ7 is the output of the complement of the data written to the device.
2. DOUT is the output of the data written to the device.
3. PA : Program Address, PD : Program Data
4. The illustration shows the last two cycles of the program command sequence.
OE
Address
t
CS
CE
DATA
WE
t
AH
t
OH
t
DF
t
AS
t
RC
t
OE
t
CE
t
DS
t
DH
t
WP
t
OES
t
PGM
Status
DOUT
555H
PA
PA
A0H
Data Polling
t
CH
PD
t
WPH
RY/BY
t
BUSY
t
RB
t
WC
Parameter
Symbol
-7
-8
-9
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
-
80
-
90
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
45
-
ns
Data Hold Time
t
DH
0
-
0
-
0
-
ns
CE Setup Time
t
CS
0
-
0
-
0
-
ns
CE Hold Time
t
CH
0
-
0
-
0
-
ns
OE Setup Time
t
OES
0
-
0
-
0
-
ns
Write Pulse Width
t
WP
35
-
35
-
45
-
ns
Write Pulse Width High
t
WPH
25
-
25
-
30
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
14(typ.)
us
Byte
9(typ.)
9(typ.)
9(typ.)
us
Accelerated Programming
Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
9(typ.)
μ
s
Byte
7(typ.)
7(typ.)
7(typ.)
μ
s
Read Cycle Time
t
RC
70
-
80
-
90
-
ns
Chip Enable Access Time
t
CE
-
70
-
80
-
90
ns
Output Enable Time
t
OE
-
25
-
25
-
35
ns
CE & OE Disable Time
t
DF
-
16
-
16
-
16
ns
Output Hold Time from Address, CE or OE
t
OH
0
-
0
-
0
-
ns
Program/Erase Valide to RY/BY Delay
t
BUSY
90
-
90
-
90
-
ns
Recovery Time from RY/BY
t
RB
0
-
0
-
0
-
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D1716UTC-DI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-DI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-DI09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FC07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FC08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UTC-DI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-DI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-DI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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