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參數(shù)資料
| 型號(hào)： | K8D1716UTC-PC09 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬(wàn)x8/1M x16）的雙銀行NOR閃存 |
| 文件頁(yè)數(shù)： | 28/41頁(yè) |
| 文件大?。?/td> | 684K |
| 代理商： | K8D1716UTC-PC09 |
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FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
28
AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CE Controlled Writes
Notes :
1. Not 100% tested.
2.This does include the preprogramming time.
Parameter
Symbol
V
CC
=2.7V~3.6V
Unit
-7
-8
-9
Min
Max
Min
Max
Min
Max
Write Cycle Time (1)
t
WC
70
-
80
-
90
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
45
-
ns
Data Hold Time
t
DH
0
-
0
-
0
-
ns
Output Enable Setup Time (1)
t
OES
0
-
0
-
0
-
ns
Output
Enable
Hold Time
Read (1)
t
OEH1
0
-
0
-
0
-
ns
Toggle and Data Polling (1)
t
OEH2
10
-
10
-
10
-
ns
WE Setup Time
t
WS
0
-
0
-
0
-
ns
WE Hold Time
t
WH
0
-
0
-
0
-
ns
CE Pulse Width
t
CP
35
-
35
-
45
-
ns
CE Pulse Width High
t
CPH
25
-
25
-
30
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
14(typ.)
μ
s
Byte
9(typ.)
9(typ.)
9(typ.)
μ
s
Accelerated Programming
Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
9(typ.)
μ
s
Byte
7(typ.)
7(typ.)
7(typ.)
μ
s
Block Erase Operation (2)
t
BERS
0.7(typ.)
0.7(typ.)
0.7(typ.)
sec
BYTE Switching Low to Output HIGH-Z
t
FLQZ
25
-
25
-
30
-
ns
ERASE AND PROGRAM PERFORMANCE
Notes :
1. 25
°
C, V
CC
=
3.0V 100,000 cycles, typical pattern
.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Block Erase Time
-
0.7
15
sec
Includes 00H programming
prior to erasure
Chip Erase Time
-
25
-
sec
Word Programming Time
-
14
330
μ
s
Excludes system-level overhead
Byte Programming Time
-
9
210
μ
s
Excludes system-level overhead
Accelerated Byte/Word
Program Time
Word Mode
-
9
210
μ
s
Excludes system-level overhead
Byte Mode
-
7
150
μ
s
Excludes system-level overhead
Chip Programming Time
Word Mode
-
14
42
sec
Excludes system-level overhead
Byte Mode
-
18
54
sec
Erase/Program Endurance
100,000
-
-
cycles
Minimum 100,000 cycles guaran-
teed
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D1716UTC-PI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UTC-PI07 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI09 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC07 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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