參數(shù)資料
型號: K8D1716UTC-PI09
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
中文描述: 1,600位(200萬x8/1M x16)的雙銀行NOR閃存
文件頁數(shù): 24/41頁
文件大?。?/td> 684K
代理商: K8D1716UTC-PI09
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
24
Figure 13. Temporary Block Group Unprotect Routine
Start
RESET=V
ID
(Note 1)
Notes :
1. All protected block groups are unprotected.
( If WP/ACC = V
IL
, the two outermost boot blocks remain protected )
2. All previously protected block groups are protected once again.
Perform Erase or
Program Operations
Temporary Block
Unprotect Completed
(Note 2)
RESET=V
IH
Start
DQ7 = Data
No
DQ5 = 1
Fail
Pass
Yes
Figure 11. Data Polling Algorithms
Figure 12. Toggle Bit Algorithms
DQ7 = Data
No
No
Yes
Read(DQ0~DQ7)
Valid Address
Read(DQ0~DQ7)
Valid Address
Start
DQ6 = Toggle
No
DQ5 = 1
Fail
Pass
No
DQ6 = Toggle
Yes
Yes
No
Read twice(DQ0~DQ7)
Valid Address
Read(DQ0~DQ7)
Valid Address
Yes
Yes
Read(DQ0~DQ7)
Valid Address
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K8D1716UTC-TC07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-TC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-TC09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-TI07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-TI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory