參數資料
型號： K91G08Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CONTACT
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁數： 11/40頁
文件大小： 729K
代理商： K91G08Q0M
FLASH MEMORY
11
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F1GXXX0M
Unit
1.8V
2.65V
3.3V
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
10
50
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
-
-
±
10
Input High Voltage
V
IH*
-
V
CC
-0.4
-
V
CC
+0.3
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.5
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F1GXXQ0M :I
OH
=-100
μ
A
K9F1GXXD0M :I
OH
=-100
μ
A
K9F1GXXU0M :I
OH
=-400
μ
A
Vcc
-0.1
-
-
V
CCQ
-0.4
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F1GXXQ0M :I
OL
=100uA
K9F1GXXD0M :I
OL
=100
μ
A
K9F1GXXU0M :I
OL
=2.1mA
-
-
0.1
-
-
0.4
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F1GXXQ0M :V
OL
=0.1V
K9F1GXXD0M :V
OL
=0.1V
K9F1GXXU0M :V
OL
=0.4V
3
4
-
3
4
-
8
10
-
mA
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