參數(shù)資料
型號(hào)： K9F1208Q0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁(yè)數(shù)： 15/45頁(yè)
文件大?。?/td> 767K
代理商： K9F1208Q0B
FLASH MEMORY
15
K9F1208U0B
K9F1208D0B
Advance
AC CHARACTERISTICS FOR OPERATION
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208Q0B K9F1208D0B K9F1208U0B
Data Transfer from Cell to Register
t
R
-
-
-
15
15
15
μ
s
ALE to RE Delay
t
AR
10
10
10
-
-
-
ns
CLE to RE Delay
t
CLR
10
10
10
-
-
-
ns
Ready to RE Low
t
RR
20
20
20
-
-
-
ns
RE Pulse Width
t
RP
25
25
25
-
-
-
ns
WE High to Busy
t
WB
-
-
-
100
100
100
ns
Read Cycle Time
t
RC
50
50
50
-
-
-
ns
RE Access Time
t
REA
-
-
-
35
30
30
ns
CE Access Time
t
CEA
-
-
-
45
45
45
ns
RE High to Output Hi-Z
t
RHZ
-
-
-
30
30
30
ns
CE High to Output Hi-Z
t
CHZ
-
-
-
20
20
20
ns
RE or CE High to Output hold
t
OH
15
15
15
-
-
-
ns
RE High Hold Time
t
REH
15
15
15
-
-
-
ns
Output Hi-Z to RE Low
t
IR
0
0
0
-
-
-
ns
WE High to RE Low
t
WHR
60
60
60
-
-
-
ns
Device resetting time(Read/Pro-
t
RST
-
-
-
5/10/500
(1)
5/10/500
(1)
5/10/500
(1)
μ
s
Parameter
Symbol
Min
Max
Unit
K9F1208U0B-
Y,V,P,F only
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
相關(guān)PDF資料
PDF描述
K9F1208Q0B-D 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 64M x 8 Bit NAND Flash Memory
K9F1208R0B TV 99C 97#22D 2#8(TWINAX) SKT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208R0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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