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參數(shù)資料
| 型號： | K9F1208U0M- |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 10/41頁 |
| 文件大?。?/td> | 1139K |
| 代理商： | K9F1208U0M- |
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
10
Pin Description
Command Latch Enable(CLE)
The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched
into the command register through the I/O ports on the rising edge of the WE signal.
Address Latch Enable(ALE)
The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of
WE with ALE high.
Chip Enable(CE)
The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode.
However, when the device is in the busy state during program or erase, CE high is ignored, and does not return to the standby mode.
Write Enable(WE)
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
The WE must be held high when outputs are activated.
Read Enable(RE)
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid t
REA
after the falling edge
of RE which also increments the internal column address counter by one.
I/O Port : I/O 0 ~ I/O 7
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z
when the chip is deselected or when the outputs are disabled.
Write Protect(WP)
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when
the WP pin is active low.
Ready/Busy(R/B)
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is
in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip
is deselected or when outputs are disabled.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1216U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-F | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F1208U0A-P | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F1208U0A-V | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0M-YCB0 | 制造商:Samsung Electro-Mechanics 功能描述:64M X 8 FLASH 2.7V PROM, 35 ns, PDSO48 |
| K9F1208U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208UOMYCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208UOM-YCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
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