參數(shù)資料
型號(hào): K9F1216D0A-P
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
中文描述: 6400 × 8位,32 × 16位NAND閃存
文件頁數(shù): 11/46頁
文件大?。?/td> 748K
代理商: K9F1216D0A-P
FLASH MEMORY
11
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F12XXX0A-XCB0
:
T
A
=0 to 70
°
C, K9F12XXX0A-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F12XXD0A(2.65V)
K9F12XXU0A(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
3.3V/2.65V DEVICE
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
V
CCQ
-0.6 to + 4.6
Temperature Under Bias
K9F12XXX0A-XCB0
T
BIAS
°
C
K9F12XXX0A-XIB0
Storage Temperature
K9F12XXX0A-XCB0
T
STG
°
C
K9F12XXX0A-XIB0
Short Circuit Current
Ios
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1216D0A-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216U0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216U0A-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216X0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory