參數(shù)資料
型號： K9F2808U0A-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 22/26頁
文件大?。?/td> 354K
代理商： K9F2808U0A-
K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
22
Figure 6. Sequential Row Read2 Operation (GND Input=Fixed Low)
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive
bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done
in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropri-
ate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered, with
RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B output, or
the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in
progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 7). The internal write verify
detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command
mode until another valid command is written to the command register.
50h
A
0
~ A
3
& A
9
~ A
23
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
2nd
Nth
(16Byte)
(16Byte)
(A
4
~ A
7
:
Don
t Care)
1st
Figure 7. Program & Read Status Operation
80h
A
0
~ A
7
& A
9
~ A
23
528 Byte Data
I/O
0
~
7
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
R
t
R
t
R
t
PROG
≈
Data Field
Spare Field
1st
Block
Nth
相關PDF資料
PDF描述
K9F2808U0A-YCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2808U0A-YIB0 TV 79C 79#22D PIN RECP
K9F2G08U0M Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
K9F2G16U0M FLASH MEMORY
K9F2G08Q0M FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
K9F2808U0A-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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