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參數(shù)資料
| 型號： | K9F2808U0A-YIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 79C 79#22D PIN RECP |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 21/26頁 |
| 文件大小： | 354K |
| 代理商： | K9F2808U0A-YIB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當(dāng)前第21頁第22頁第23頁第24頁第25頁第26頁
K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
21
Figure 4. Read2 Operation
50h
A
0
~ A
3
& A
9
~ A
23
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Data Field
Spare Field
Start Add.(3Cycle)
(A
4
~ A
7
:
Don
′
t Care)
I/O
0
~
7
RE
Figure 5. Sequential Row Read1 Operation
00h
01h
A
0
~ A
7
& A
9
~ A
23
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
t
R
≈
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
(GND Input=L, 00h Command)
Data Field
Spare Field
(GND Input=L, 01h Command)
Data Field
Spare Field
(GND Input=H, 00h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2G08U0M | Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| K9F2G16U0M | FLASH MEMORY |
| K9F2G08Q0M | FLASH MEMORY |
| K9F2G16Q0M | FLASH MEMORY |
| K9F5608D0C | TV 37C 37#16 PIN RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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