參數(shù)資料
              型號(hào): K9F2816Q0C-HCB0
              廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
              英文描述: DB50 MALE/ DB50 MALE 2FT
              中文描述: 1,600 × 8位NAND閃存
              文件頁(yè)數(shù): 21/33頁(yè)
              文件大小: 583K
              代理商: K9F2816Q0C-HCB0
              K9F2816U0C-DCB0,DIB0
              FLASH MEMORY
              21
              K9F2808U0C-DCB0,DIB0
              K9F2808U0C-YCB0,YIB0
              K9F2816U0C-YCB0,YIB0
              K9F2808U0C-VCB0,VIB0
              t
              OH
              * Status Read Cycle
              CE
              WE
              CLE
              RE
              I/Ox
              70h
              Status Output
              t
              CLR
              t
              CLH
              t
              CS
              t
              WP
              t
              CH
              t
              DS
              t
              DH
              t
              REA
              t
              IR
              t
              OH
              t
              OH
              t
              WHR
              t
              CEA
              t
              CLS
              READ1 OPERATION
              (READ ONE PAGE)
              CE
              CLE
              R/B
              WE
              ALE
              RE
              Busy
              Read
              CMD
              A0~A7
              A9~A16
              A17~A23
              Dout N
              Dout N+1
              Dout N+2
              Dout N+3
              Column
              Address
              Page(Row)
              Address
              t
              WB
              t
              AR
              t
              R
              t
              RC
              t
              RR
              Dout m
              t
              WC
              X8 device : m = 528 , Read CMD = 00h or 01h
              X16 device : m = 264 , Read CMD = 00h
              t
              OH
              t
              CHZ
              t
              CEH
              t
              RB
              t
              CRY
              N Address
              1)
              1)
              NOTES
              : 1) is only valid on K9F2808U0C_Y,P or K9F2808U0C_V,F
              I/Ox
              On K9F2808U0C_Y,P or K9F2808U0C_V,F
              CE must be held
              low during tR
              t
              RHZ
              t
              CHZ
              t
              RHZ
              相關(guān)PDF資料
              PDF描述
              K9F2816Q0C-HIB0 INTERNAL SNGL-DRV LOOP CABLE C
              K9F2816U0C-PIB0 16M x 8 Bit NAND Flash Memory
              K9F2816U0C-HCB0 16M x 8 Bit NAND Flash Memory
              K9F3208W0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle
              K9F3208W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
              相關(guān)代理商/技術(shù)參數(shù)
              參數(shù)描述
              K9F2816Q0C-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
              K9F2816U0C-DCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
              K9F2816U0C-DIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
              K9F2816U0C-HCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
              K9F2816U0C-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory