參數(shù)資料
型號： K9F2816U0C-PCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 27/33頁
文件大?。?/td> 583K
代理商： K9F2816U0C-PCB0
K9F2816U0C-DCB0,DIB0
FLASH MEMORY
27
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
Figure 9. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(3Cycle)
RE
t
R
X8 device : A
0
~ A
3
& A
9
~ A23
X16 device : A
0
~ A
2
& A
9
~ A23
Main array
Data Field
Spare Field
Figure 8-1. Sequential Row Read1 Operation
(only for K9F2808U0C-Y,P and K9F2808U0C-V,F valid wihin a block )
00h
01h
A
0
~ A
7
& A
9
~ A23
I/Ox
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
≈
(GND input=L, 00h Command)
Data Field
Spare Field
(GND input=L, 01h Command)
Data Field
Spare Field
(GND input=H, 00h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
1st half array 2nd half array
1st
2nd
Nth
X8 device : A
4
~ A
7
Don’t care
X16 device : A
3
~ A
7
are "L"
I/Ox
On K9F2808U0C_Y,P or K9F2808U0C_V ,F
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F2808Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2816U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F2G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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