參數(shù)資料
型號(hào)： K9F4008W0A-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x 8 bit NAND Flash Memory
中文描述： 為512k × 8位NAND快閃記憶體
文件頁(yè)數(shù)： 2/24頁(yè)
文件大?。?/td> 318K
代理商： K9F4008W0A-
K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
2
512K x 8 Bit NAND Flash Memory
The K9F4008W0A is a 512Kx8bit NAND Flash Memory. Its
NAND cell structure provides the most cost-effective solution
for Digital Audio Recording. A Program operation programs a
32-byte frame in typical 500
μ
s and an Erase operation erase a
4K-byte block in typical 6ms. Data in a frame can be read out at
a burst cycle rate of 120ns/byte. The I/O pins serve as the ports
for address and data input/output as well as for command
inputs. The on-chip write controller automates the program and
erase operations, including program or erase pulse repetition
where required, and performs internal verification of cell data.
The K9F4008W0A is an optimum solution for flash memory
application that do not require the high performance levels or
capacity of larger density flash memories. These application
include data storage in digital Telephone Answering
Devices(TAD) and other consumer applications that require
voice data storage.
GENERAL DESCRIPTION
FEATURES
Voltage Supply: 3.0V~5.5V
Organization
- Memory Cell Array : 512K x 8 bit
- Data Register : 32 x 8 bit
Automatic Program and Erase (Typical)
- Frame Program : 32 Byte in 500
μ
s
- Block Erase : 4K Byte in 6ms
32-Byte Frame Read Operation
- Random Access : 15
μ
s(Max.)
- Serial Frame Access : 120ns(Min.)
Command/Address/Data Multiplexed I/O port
Low Operation Current (Typical)
- 10
μ
A Standby Current
- 10mA Read/ Program/Erase Current
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
Package
- 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
PIN CONFIGURATION
VSS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VCC
I/O4
I/O5
I/O6
I/O7
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
VCC
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44(40) TSOP (II)
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC,
V
SS
or GND inputs disconnected.
PIN DESCRIPTION
Pin Name
Pin Function
I/O
0
~ I/O
7
Data Inputs/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
GND
Ground Input
R/B
Ready/Busy output
V
CC
Power
V
SS
Ground
N.C
No Connection
相關(guān)PDF資料
PDF描述
K9F4008W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F4008W0A-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4G08U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-I 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*