參數(shù)資料
型號(hào)： K9F5608U0C-H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 11/39頁
文件大?。?/td> 655K
代理商： K9F5608U0C-H
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
10
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
25
Erase
I
CC
3
-
-
8
15
-
10
25
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F56XXQ0C :I
OH
=-100
μ
A
K9F56XXU0C :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F56XXQ0C :I
OL
=100uA
K9F56XXU0C :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F56XXQ0C :V
OL
=0.1V
K9F56XXU0C :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0
:
T
A
=0 to 70
°
C, K9F56XXX0C-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F56XXX0C-XCB0
T
BIAS
-10 to +125
°
C
K9F56XXX0C-XIB0
-40 to +125
Storage Temperature
K9F56XXX0C-XCB0
T
STG
-65 to +150
°
C
K9F56XXX0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9F5608U0C-P 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-V 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-Y 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*